Taiwan Semiconductor-Single FETs, MOSFETs-TSM480P06CP ROG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);22.4nC@10V/Pd - Power Dissipation;66W/RDS(on);48mΩ@10V/Operating Temperature -;-50℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.25nF


60V 48mΩ@10V 66W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);22.4nC@10V/Pd - Power Dissipation;66W/RDS(on);48mΩ@10V/Operating Temperature -;-50℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.25nF60V 48mΩ@10V 66W TO-252(DPAK)... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);22.4nC@10V/Pd - Power Dissipation;66W/RDS(on);48mΩ@10V/Operating Temperature -;-50℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.25nF


    60V 48mΩ@10V 66W TO-252(DPAK) Single FETs, MOSFETs RoHS

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