Taiwan Semiconductor-Single FETs, MOSFETs-TSM4NB60CH

Description

Drain to Source Voltage;600V/Gate Charge(Qg);16nC@10V/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V


600V 2.5Ω@10V 114W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);16nC@10V/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V600V 2.5Ω@10V 114W Single FETs,... Read more

$7.20 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);16nC@10V/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V


    600V 2.5Ω@10V 114W Single FETs, MOSFETs RoHS

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