Taiwan Semiconductor-Single FETs, MOSFETs-TSM4NB60CH C5G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;574pF/Output Capacitance(Coss);56pF


600V 2.5Ω@10V 1 N-channel 114W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;574pF/Output Capacitance(Coss);56pF


    600V 2.5Ω@10V 1 N-channel 114W TO-251(IPAK) Single FETs, MOSFETs RoHS

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