Taiwan Semiconductor-Single FETs, MOSFETs-TSM4NB65CI C0G

Description

Drain to Source Voltage;650V/Gate Charge(Qg);13.46nC@10V/Pd - Power Dissipation;70W/RDS(on);3.37Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;549pF


650V 3.37Ω@10V 70W ITO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);13.46nC@10V/Pd - Power Dissipation;70W/RDS(on);3.37Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;549pF650V 3.37Ω@10V 70W ITO-220AB... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);13.46nC@10V/Pd - Power Dissipation;70W/RDS(on);3.37Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;549pF


    650V 3.37Ω@10V 70W ITO-220AB Single FETs, MOSFETs RoHS

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