Taiwan Semiconductor-Single FETs, MOSFETs-TSM4NC50CP

Description

Drain to Source Voltage;500V/Gate Charge(Qg);12nC@10V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);2.7Ω@10V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V


500V 2.7Ω@10V 83W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);12nC@10V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);2.7Ω@10V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V500V 2.7Ω@10V 83W TO-252(DPAK) Single FETs, MOSFETs... Read more

$6.00 Excl. VAT

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);12nC@10V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);2.7Ω@10V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V


    500V 2.7Ω@10V 83W TO-252(DPAK) Single FETs, MOSFETs RoHS

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