Taiwan Semiconductor-Single FETs, MOSFETs-TSM5NC50CF C0G

Description

Drain to Source Voltage;500V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);1.38Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;586pF


500V 1.38Ω@10V 1 N-channel 40W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);1.38Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;586pF500V 1.38Ω@10V 1... Read more

$3.93 Excl. VAT

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);1.38Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;586pF


    500V 1.38Ω@10V 1 N-channel 40W ITO-220S Single FETs, MOSFETs RoHS

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