Taiwan Semiconductor-Single FETs, MOSFETs-TSM600P03CS RLG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.1W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;560pF


30V 60mΩ@10V 1 P-Channel 2.1W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.1W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;560pF30V 60mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9.6nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.1W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;560pF


    30V 60mΩ@10V 1 P-Channel 2.1W SOP-8 Single FETs, MOSFETs RoHS

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