Taiwan Semiconductor-Single FETs, MOSFETs-TSM60N900CH C5G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF


600V 900mΩ@10V 1 N-channel 50W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF600V 900mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF


    600V 900mΩ@10V 1 N-channel 50W TO-251(IPAK) Single FETs, MOSFETs RoHS

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