Taiwan Semiconductor-Single FETs, MOSFETs-TSM60N900CI C0G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);36pF


600V 900mΩ@10V 1 N-channel ITO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);36pF600V 900mΩ@10V 1 N-channel ITO-220AB... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);36pF


    600V 900mΩ@10V 1 N-channel ITO-220AB Single FETs, MOSFETs RoHS

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