Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB041PW

Description

Drain to Source Voltage;600V/Gate Charge(Qg);139nC@10V/Type;N-Channel/Pd - Power Dissipation;446W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);78A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.12nF/Output Capacitance(Coss);276pF


600V 41mΩ@10V 446W TO-247 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);139nC@10V/Type;N-Channel/Pd - Power Dissipation;446W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);78A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.12nF/Output Capacitance(Coss);276pF600V 41mΩ@10V 446W... Read more

$139.29 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);139nC@10V/Type;N-Channel/Pd - Power Dissipation;446W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);78A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;6.12nF/Output Capacitance(Coss);276pF


    600V 41mΩ@10V 446W TO-247 Single FETs, MOSFETs RoHS

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