Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB099CF

Description

Drain to Source Voltage;600V/Gate Charge(Qg);62nC@10V/Type;N-Channel/Pd - Power Dissipation;69W/RDS(on);99mΩ@10V/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));4V


600V 99mΩ@10V 69W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);62nC@10V/Type;N-Channel/Pd - Power Dissipation;69W/RDS(on);99mΩ@10V/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));4V600V 99mΩ@10V 69W ITO-220S Single FETs, MOSFETs... Read more

$58.32 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);62nC@10V/Type;N-Channel/Pd - Power Dissipation;69W/RDS(on);99mΩ@10V/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));4V


    600V 99mΩ@10V 69W ITO-220S Single FETs, MOSFETs RoHS

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