/Gate Charge(Qg);62nC@10V/Type;N-Channel/Pd - Power Dissipation;298W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));4V/Output Capacitance(Coss);123pF99mΩ@10V 298W TO-220 Single FETs, MOSFETs RoHS Read more

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