Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB099CZ C0G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);62nC@10V/Number;1 N-channel/Pd - Power Dissipation;298W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.587nF


600V 99mΩ@10V 1 N-channel 298W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);62nC@10V/Number;1 N-channel/Pd - Power Dissipation;298W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$30.15 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);62nC@10V/Number;1 N-channel/Pd - Power Dissipation;298W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.587nF


    600V 99mΩ@10V 1 N-channel 298W TO-220 Single FETs, MOSFETs RoHS

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