Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB190CF

Description

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Type;N-Channel/Pd - Power Dissipation;59.5W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V


600V 190mΩ@10V 59.5W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Type;N-Channel/Pd - Power Dissipation;59.5W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V600V 190mΩ@10V 59.5W ITO-220S Single... Read more

$29.49 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);32nC@10V/Type;N-Channel/Pd - Power Dissipation;59.5W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V


    600V 190mΩ@10V 59.5W ITO-220S Single FETs, MOSFETs RoHS

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