Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB190CI
- Taiwan Semiconductor
/Gate Charge(Qg);31nC@10V/Type;N-Channel/Pd - Power Dissipation;150.6W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V190mΩ@10V 150.6W ITO-220 Single FETs, MOSFETs RoHS Read more
$33.12 Excl. VAT
-
Guaranteed secure & safe checkout.