Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB190CM2

Description

Drain to Source Voltage;600V/Gate Charge(Qg);31nC@10V/Type;N-Channel/Pd - Power Dissipation;150.6W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V


600V 190mΩ@10V 150.6W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);31nC@10V/Type;N-Channel/Pd - Power Dissipation;150.6W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V600V 190mΩ@10V 150.6W Single FETs,... Read more

$32.40 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);31nC@10V/Type;N-Channel/Pd - Power Dissipation;150.6W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V


    600V 190mΩ@10V 150.6W Single FETs, MOSFETs RoHS

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