Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB190CZ

Description

/Gate Charge(Qg);31nC@10V/Type;N-Channel/Pd - Power Dissipation;150.6W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V


190mΩ@10V 150.6W TO-220 Single FETs, MOSFETs RoHS

Product form

/Gate Charge(Qg);31nC@10V/Type;N-Channel/Pd - Power Dissipation;150.6W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V190mΩ@10V 150.6W TO-220 Single FETs, MOSFETs RoHS Read more

$30.60 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    /Gate Charge(Qg);31nC@10V/Type;N-Channel/Pd - Power Dissipation;150.6W/RDS(on);190mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V


    190mΩ@10V 150.6W TO-220 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account