Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB1R4CH

Description

Drain to Source Voltage;600V/Gate Charge(Qg);7.12nC@10V/Type;N-Channel/Pd - Power Dissipation;28.4W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V


600V 1.4Ω@10V 28.4W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);7.12nC@10V/Type;N-Channel/Pd - Power Dissipation;28.4W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V600V 1.4Ω@10V 28.4W TO-251(IPAK) Single... Read more

$7.59 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);7.12nC@10V/Type;N-Channel/Pd - Power Dissipation;28.4W/RDS(on);1.4Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V


    600V 1.4Ω@10V 28.4W TO-251(IPAK) Single FETs, MOSFETs RoHS

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