Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB1R4CH C5G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);7.12nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;28.4W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;257.3pF/Output Capacitance(Coss);41.5pF


N-Channel 600V 3A 28.4W Through Hole TO-251(IPAK)

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);7.12nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;28.4W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;257.3pF/Output Capacitance(Coss);41.5pFN-Channel 600V... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);7.12nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;28.4W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;257.3pF/Output Capacitance(Coss);41.5pF


    N-Channel 600V 3A 28.4W Through Hole TO-251(IPAK)

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