Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB260CI C0G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;32.1W/RDS(on);260mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.273nF/Output Capacitance(Coss);92pF


600V 260mΩ@10V 1 N-channel 32.1W ITO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;32.1W/RDS(on);260mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.273nF/Output Capacitance(Coss);92pF600V 260mΩ@10V... Read more

$17.58 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);30nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;32.1W/RDS(on);260mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.273nF/Output Capacitance(Coss);92pF


    600V 260mΩ@10V 1 N-channel 32.1W ITO-220AB Single FETs, MOSFETs RoHS

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