Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB380CH

Description

Drain to Source Voltage;600V/Gate Charge(Qg);19.4nC@10V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;795pF/Output Capacitance(Coss);67pF


600V 380mΩ@10V 83W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);19.4nC@10V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;795pF/Output Capacitance(Coss);67pF600V 380mΩ@10V 83W... Read more

$16.26 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);19.4nC@10V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;795pF/Output Capacitance(Coss);67pF


    600V 380mΩ@10V 83W TO-251(IPAK) Single FETs, MOSFETs RoHS

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