Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB600CP

Description

Drain to Source Voltage;600V/Gate Charge(Qg);13nC@10V/Type;N-Channel/Pd - Power Dissipation;63W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V


600V 600mΩ@10V 63W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);13nC@10V/Type;N-Channel/Pd - Power Dissipation;63W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V600V 600mΩ@10V 63W TO-252(DPAK) Single... Read more

$12.06 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);13nC@10V/Type;N-Channel/Pd - Power Dissipation;63W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V


    600V 600mΩ@10V 63W TO-252(DPAK) Single FETs, MOSFETs RoHS

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