Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NB900CP
- Taiwan Semiconductor
Drain to Source Voltage;600V/Gate Charge(Qg);9.6nC@10V/Type;N-Channel/Pd - Power Dissipation;36.8W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V600V 900mΩ@10V 36.8W TO-252(DPAK) Single... Read more
$9.66 Excl. VAT
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