Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NC165CI

Description

Drain to Source Voltage;600V/Gate Charge(Qg);44nC@10V/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));5V


600V 165mΩ@10V 89W ITO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);44nC@10V/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));5V600V 165mΩ@10V 89W ITO-220 Single... Read more

$37.44 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);44nC@10V/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));5V


    600V 165mΩ@10V 89W ITO-220 Single FETs, MOSFETs RoHS

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