Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NC165CI C0G
- Taiwan Semiconductor
Drain to Source Voltage;600V/Gate Charge(Qg);44nC@10V/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);165mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.857nF/Output Capacitance(Coss);53pF600V 165mΩ@10V... Read more
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