Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NC196CI C0G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);38nC/Type;N-Channel/Pd - Power Dissipation;70W/RDS(on);196mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.535nF


600V 196mΩ@10V 70W ITO-220 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;600V/Gate Charge(Qg);38nC/Type;N-Channel/Pd - Power Dissipation;70W/RDS(on);196mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.535nF600V 196mΩ@10V 70W ITO-220... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);38nC/Type;N-Channel/Pd - Power Dissipation;70W/RDS(on);196mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.535nF


    600V 196mΩ@10V 70W ITO-220 Single FETs, MOSFETs RoHS

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