Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NC196CM2 RNG

Description

Drain to Source Voltage;600V/Gate Charge(Qg);39nC/Type;N-Channel/Pd - Power Dissipation;152W/RDS(on);196mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);28A/Gate Threshold Voltage (Vgs(th));5V


600V 196mΩ@10V 152W TO-263AB(D2PAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);39nC/Type;N-Channel/Pd - Power Dissipation;152W/RDS(on);196mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);28A/Gate Threshold Voltage (Vgs(th));5V600V 196mΩ@10V 152W TO-263AB(D2PAK) Single... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);39nC/Type;N-Channel/Pd - Power Dissipation;152W/RDS(on);196mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);28A/Gate Threshold Voltage (Vgs(th));5V


    600V 196mΩ@10V 152W TO-263AB(D2PAK) Single FETs, MOSFETs RoHS

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