Taiwan Semiconductor-Single FETs, MOSFETs-TSM60NC390CI C0G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);21.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;78W/RDS(on);390mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;814pF


600V 390mΩ@10V 1 N-channel 78W ITO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);21.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;78W/RDS(on);390mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input... Read more

$3.21 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);21.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;78W/RDS(on);390mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;814pF


    600V 390mΩ@10V 1 N-channel 78W ITO-220 Single FETs, MOSFETs RoHS

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