Taiwan Semiconductor-Single FETs, MOSFETs-TSM650N15CR

Description

Drain to Source Voltage;150V/Gate Charge(Qg);36nC@10V/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);80mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.829nF


150V 80mΩ@6V 96W PDFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);36nC@10V/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);80mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.829nF150V 80mΩ@6V 96W PDFN-8(5x6)... Read more

$17.97 Excl. VAT

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);36nC@10V/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);80mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);24A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.829nF


    150V 80mΩ@6V 96W PDFN-8(5x6) Single FETs, MOSFETs RoHS

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