Taiwan Semiconductor-Single FETs, MOSFETs-TSM650P02CX

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6.4nC@4.5V/Type;P-Channel/Pd - Power Dissipation;1.56W/RDS(on);130mΩ@1.8V/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));800mV


20V 130mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6.4nC@4.5V/Type;P-Channel/Pd - Power Dissipation;1.56W/RDS(on);130mΩ@1.8V/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));800mV20V 130mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs... Read more

$1.77 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6.4nC@4.5V/Type;P-Channel/Pd - Power Dissipation;1.56W/RDS(on);130mΩ@1.8V/Current - Continuous Drain(Id);4.1A/Gate Threshold Voltage (Vgs(th));800mV


    20V 130mΩ@1.8V 1.56W SOT-23 Single FETs, MOSFETs RoHS

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