Taiwan Semiconductor-Single FETs, MOSFETs-TSM680P06CH

Description

Drain to Source Voltage;60V/Gate Charge(Qg);18nC@10V/Type;P-Channel/Pd - Power Dissipation;20.5W/RDS(on);110mΩ@4.5V/Current - Continuous Drain(Id);14.5A/Gate Threshold Voltage (Vgs(th));2.2V


60V 110mΩ@4.5V 20.5W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);18nC@10V/Type;P-Channel/Pd - Power Dissipation;20.5W/RDS(on);110mΩ@4.5V/Current - Continuous Drain(Id);14.5A/Gate Threshold Voltage (Vgs(th));2.2V60V 110mΩ@4.5V 20.5W Single FETs, MOSFETs RoHS Read more

$6.51 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);18nC@10V/Type;P-Channel/Pd - Power Dissipation;20.5W/RDS(on);110mΩ@4.5V/Current - Continuous Drain(Id);14.5A/Gate Threshold Voltage (Vgs(th));2.2V


    60V 110mΩ@4.5V 20.5W Single FETs, MOSFETs RoHS

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