Taiwan Semiconductor-Single FETs, MOSFETs-TSM680P06CP ROG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);16.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;20W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;870pF


60V 68mΩ@10V 1 P-Channel 20W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);16.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;20W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;870pF60V 68mΩ@10V 1 P-Channel 20W TO-252(DPAK)... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);16.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;20W/RDS(on);68mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;870pF


    60V 68mΩ@10V 1 P-Channel 20W TO-252(DPAK) Single FETs, MOSFETs RoHS

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