Taiwan Semiconductor-Single FETs, MOSFETs-TSM70N380CP

Description

Drain to Source Voltage;700V/Gate Charge(Qg);18.8nC@10V/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V


700V 380mΩ@10V 125W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);18.8nC@10V/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V700V 380mΩ@10V 125W TO-252(DPAK) Single FETs, MOSFETs RoHS Read more

$23.91 Excl. VAT

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);18.8nC@10V/Type;N-Channel/Pd - Power Dissipation;125W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V


    700V 380mΩ@10V 125W TO-252(DPAK) Single FETs, MOSFETs RoHS

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