Taiwan Semiconductor-Single FETs, MOSFETs-TSM70N600ACL X0G

Description

Drain to Source Voltage;700V/Gate Charge(Qg);12.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;743pF


700V 600mΩ@10V 1 N-channel 83W TO-262S(I2PAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);12.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;743pF700V 600mΩ@10V 1... Read more

$13.53 Excl. VAT

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);12.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);600mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;743pF


    700V 600mΩ@10V 1 N-channel 83W TO-262S(I2PAK) Single FETs, MOSFETs RoHS

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