Taiwan Semiconductor-Single FETs, MOSFETs-TSM70N750CH

Description

Drain to Source Voltage;700V/Gate Charge(Qg);10.7nC@10V/Type;N-Channel/Pd - Power Dissipation;62.5W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4V


700V 750mΩ@10V 62.5W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);10.7nC@10V/Type;N-Channel/Pd - Power Dissipation;62.5W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4V700V 750mΩ@10V 62.5W TO-251(IPAK) Single... Read more

$16.17 Excl. VAT

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);10.7nC@10V/Type;N-Channel/Pd - Power Dissipation;62.5W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4V


    700V 750mΩ@10V 62.5W TO-251(IPAK) Single FETs, MOSFETs RoHS

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