Taiwan Semiconductor-Single FETs, MOSFETs-TSM70N750CH C5G

Description

Drain to Source Voltage;700V/Gate Charge(Qg);10.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;555pF


700V 750mΩ@10V 1 N-channel 62.5W TO-251(IPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);10.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;555pF700V 750mΩ@10V 1 N-channel 62.5W TO-251(IPAK)... Read more

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);10.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;62.5W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;555pF


    700V 750mΩ@10V 1 N-channel 62.5W TO-251(IPAK) Single FETs, MOSFETs RoHS

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