Taiwan Semiconductor-Single FETs, MOSFETs-TSM70N900CI

Description

Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC/Type;N-Channel/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V


700V 900mΩ@10V ITO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC/Type;N-Channel/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V700V 900mΩ@10V ITO-220 Single FETs, MOSFETs RoHS Read more

$17.34 Excl. VAT

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC/Type;N-Channel/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V


    700V 900mΩ@10V ITO-220 Single FETs, MOSFETs RoHS

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