Taiwan Semiconductor-Single FETs, MOSFETs-TSM70N900CI C0G

Description

Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Ciss-Input Capacitance;482pF


700V 900mΩ@10V 1 N-channel 50W ITO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Ciss-Input Capacitance;482pF700V 900mΩ@10V 1 N-channel 50W ITO-220AB... Read more

$9.30 Excl. VAT

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Ciss-Input Capacitance;482pF


    700V 900mΩ@10V 1 N-channel 50W ITO-220AB Single FETs, MOSFETs RoHS

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