Taiwan Semiconductor-Single FETs, MOSFETs-TSM70N900CP

Description

Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC@10V/Type;N-Channel/Pd - Power Dissipation;20W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;482pF


700V 900mΩ@10V 20W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC@10V/Type;N-Channel/Pd - Power Dissipation;20W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;482pF700V 900mΩ@10V 20W TO-252(DPAK)... Read more

$14.31 Excl. VAT

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);9.7nC@10V/Type;N-Channel/Pd - Power Dissipation;20W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;482pF


    700V 900mΩ@10V 20W TO-252(DPAK) Single FETs, MOSFETs RoHS

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