Taiwan Semiconductor-Single FETs, MOSFETs-TSM7NC60CF

Description

Drain to Source Voltage;600V/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;44.6W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V


600V 1.2Ω@10V 44.6W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;44.6W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V600V 1.2Ω@10V 44.6W ITO-220S Single... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);24nC@10V/Type;N-Channel/Pd - Power Dissipation;44.6W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V


    600V 1.2Ω@10V 44.6W ITO-220S Single FETs, MOSFETs RoHS

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