Taiwan Semiconductor-Single FETs, MOSFETs-TSM7NC60CF C0G

Description

Drain to Source Voltage;600V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;44.6W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.169nF


600V 1.2Ω@10V 1 N-channel 44.6W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;44.6W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.169nF600V 1.2Ω@10V 1... Read more

$5.52 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;44.6W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.169nF


    600V 1.2Ω@10V 1 N-channel 44.6W ITO-220S Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account