Taiwan Semiconductor-Single FETs, MOSFETs-TSM7NC65CF C0G

Description

Drain to Source Voltage;650V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;44.6W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.169nF


650V 1.35Ω@10V 1 N-channel 44.6W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;44.6W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.169nF650V 1.35Ω@10V 1... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);24nC@10V/Number;1 N-channel/Pd - Power Dissipation;44.6W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.169nF


    650V 1.35Ω@10V 1 N-channel 44.6W ITO-220S Single FETs, MOSFETs RoHS

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