Taiwan Semiconductor-Single FETs, MOSFETs-TSM7ND65CI

Description

Drain to Source Voltage;650V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.124nF


650V 1.35Ω@10V 1 N-channel 50W ITO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;1.124nF


    650V 1.35Ω@10V 1 N-channel 50W ITO-220 Single FETs, MOSFETs RoHS

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