Taiwan Semiconductor-Single FETs, MOSFETs-TSM7P06CP

Description

Drain to Source Voltage;60V/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;15.6W/RDS(on);220mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);20pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;425pF/Output Capacitance(Coss);35pF


60V 220mΩ@4.5V 15.6W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;15.6W/RDS(on);220mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);20pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;425pF/Output Capacitance(Coss);35pF60V 220mΩ@4.5V 15.6W TO-252(DPAK) Single... Read more

$3.51 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;15.6W/RDS(on);220mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);20pF/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;425pF/Output Capacitance(Coss);35pF


    60V 220mΩ@4.5V 15.6W TO-252(DPAK) Single FETs, MOSFETs RoHS

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