Taiwan Semiconductor-Single FETs, MOSFETs-TSM7P06CP ROG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;15.6W/RDS(on);180mΩ@10V/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;425pF


60V 180mΩ@10V 15.6W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;15.6W/RDS(on);180mΩ@10V/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;425pF60V 180mΩ@10V 15.6W TO-252(DPAK) Single FETs, MOSFETs RoHS Read more

$0.72 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);8.2nC@10V/Pd - Power Dissipation;15.6W/RDS(on);180mΩ@10V/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;425pF


    60V 180mΩ@10V 15.6W TO-252(DPAK) Single FETs, MOSFETs RoHS

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