Taiwan Semiconductor-Single FETs, MOSFETs-TSM80N1R2CL C0G

Description

Drain to Source Voltage;800V/Gate Charge(Qg);19.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;685pF/Output Capacitance(Coss);62pF


800V 1.2Ω@10V 1 N-channel 110W TO-262S(I2PAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);19.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;685pF/Output Capacitance(Coss);62pF800V 1.2Ω@10V... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);19.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;685pF/Output Capacitance(Coss);62pF


    800V 1.2Ω@10V 1 N-channel 110W TO-262S(I2PAK) Single FETs, MOSFETs RoHS

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