Taiwan Semiconductor-Single FETs, MOSFETs-TSM80N400CF

Description

Drain to Source Voltage;800V/Gate Charge(Qg);51nC@10V/Type;N-Channel/Pd - Power Dissipation;69W/RDS(on);400mΩ@10V/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.848nF


800V 400mΩ@10V 69W ITO-220S Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);51nC@10V/Type;N-Channel/Pd - Power Dissipation;69W/RDS(on);400mΩ@10V/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.848nF800V 400mΩ@10V 69W ITO-220S Single FETs,... Read more

$40.08 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);51nC@10V/Type;N-Channel/Pd - Power Dissipation;69W/RDS(on);400mΩ@10V/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.848nF


    800V 400mΩ@10V 69W ITO-220S Single FETs, MOSFETs RoHS

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