Taiwan Semiconductor-Single FETs, MOSFETs-TSM80N950CP

Description

Drain to Source Voltage;800V/Gate Charge(Qg);19.6nC@10V/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;691pF/Output Capacitance(Coss);63pF


800V 950mΩ@10V 110W TO-252(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);19.6nC@10V/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;691pF/Output Capacitance(Coss);63pF800V 950mΩ@10V 110W... Read more

$20.43 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);19.6nC@10V/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);950mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;691pF/Output Capacitance(Coss);63pF


    800V 950mΩ@10V 110W TO-252(DPAK) Single FETs, MOSFETs RoHS

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