Taiwan Semiconductor-Single FETs, MOSFETs-TSM850N06CX

Description

Drain to Source Voltage;60V/Gate Charge(Qg);4.6nC/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;529pF/Output Capacitance(Coss);29pF


60V 100mΩ@4.5V 1.7W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);4.6nC/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;529pF/Output... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);4.6nC/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;529pF/Output Capacitance(Coss);29pF


    60V 100mΩ@4.5V 1.7W SOT-23 Single FETs, MOSFETs RoHS

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