Taiwan Semiconductor-Single FETs, MOSFETs-TSM850N06CX RFG

Description

Drain to Source Voltage;60V/Gate Charge(Qg);9.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.7W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;529pF


60V 85mΩ@10V 1 N-channel 1.7W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);9.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.7W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;529pF60V 85mΩ@10V 1 N-channel 1.7W SOT-23... Read more

$16.62 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);9.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.7W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;529pF


    60V 85mΩ@10V 1 N-channel 1.7W SOT-23 Single FETs, MOSFETs RoHS

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